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600V IRFPC50PBF Mosfet Power Transistor Through Hole TO-247-3

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600V IRFPC50PBF Mosfet Power Transistor Through Hole TO-247-3

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Brand Name : IR

Model Number : IRFPC50PBF

Certification : CE

Place of Origin : CN

MOQ : 30 pieces

Price : negotiable

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 10Kpcs per year

Delivery Time : 1-2 working days

Packaging Details : Plastic Tubes

Goods Condition : Brand New

Part Status : Active

Lead Free / Rohs : Complaint

Function : MOSFET

Mounting Type : Through Hole

Package : TO247

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IRFPC50PBF N-Channel MOSFET TRANSISTOR 600V 11A (Tc) 180W (Tc) Through Hole TO-247-3


FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications

ManufacturerVishay Siliconix
Series-
Packaging Tube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs140nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
FET Feature-
Power Dissipation (Max)180W (Tc)
Rds On (Max) @ Id, Vgs600 mOhm @ 6A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3


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Product Tags:

high power mosfet transistors

      

n channel transistor

      
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