FGL60N100BNTD IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3

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Shenzhen Koben Electronics Co., Ltd.

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Name: FGL60N100BNTD IGBT NPT and Trench 1000V 60A 180W Through Hole TO2643
Brand: Fairchild Semiconductor
Price: 1 USD

Brand Name : Fairchild Semiconductor

Model Number : FGL60N100BNTD

Certification : ROHS

Place of Origin : CHINA

MOQ : 10pcs

Price : negotiate

Payment Terms : Western Union, T/T,Paypal

Supply Ability : Consultation

Delivery Time : 2-3 working days

Packaging Details : 375PCS/Standard Package

Voltage - Collector Emitter Breakdown (Max) : 1000V

Power - Max : 180W

Operating Temperature : -55°C ~ 150°C (TJ)

Reverse Recovery Time (trr) : 1.2µs

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FGL60N100BNTD IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3

Features

• High Speed Switching

• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A

• High Input Impedance

• Built-in Fast Recovery Diode

General Description

Trench insulated gate bipolar transistors (IGBTs) with NPT

technology show outstanding performance in conduction

and switching characteristics as well as enhanced

avalanche ruggedness. These devices are well suited for

Induction Heating ( I-H ) applications

IGBT Type	NPT and Trench
Voltage - Collector Emitter Breakdown (Max)	1000V
Current - Collector (Ic) (Max)	60A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 60A
Power - Max	180W
Switching Energy	-
Input Type	Standard
Gate Charge	275nC
Td (on/off) @ 25°C	140ns/630ns
Test Condition	600V, 60A, 51 Ohm, 15V
Reverse Recovery Time (trr)	1.2µs
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole

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Product Tags:

resolver to digital converter ic

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